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En casa > productos > Módulo de potencia IGBT > IRG8P60N120KD-EPBF IGBT Power Module Transistors IGBTs Single

IRG8P60N120KD-EPBF IGBT Power Module Transistors IGBTs Single

Categoría:
Módulo de potencia IGBT
Precio:
Negotiable
Forma de pago:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Especificaciones
Descripción:
IGBT 1200V 100A 420W TO-247AD
Número de parte:
IRG8P60N120KD-EPBF
Fabricante:
Infineon Technologies
Categoría:
Transistores - IGBTs - solos
Familia:
Transistores - IGBTs - solos
Introducción

IRG8P60N120KD-EPBF Specifications

Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 100A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Power - Max 420W
Switching Energy 2.8mJ (on), 2.3mJ (off)
Input Type Standard
Gate Charge 345nC
Td (on/off) @ 25°C 40ns/240ns
Test Condition 600V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) 210ns
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRG8P60N120KD-EPBF Packaging

Detection

IRG8P60N120KD-EPBF IGBT Power Module Transistors IGBTs SingleIRG8P60N120KD-EPBF IGBT Power Module Transistors IGBTs SingleIRG8P60N120KD-EPBF IGBT Power Module Transistors IGBTs SingleIRG8P60N120KD-EPBF IGBT Power Module Transistors IGBTs Single

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Las existencias:
Cuota de producción:
Negotiable