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En casa > productos > Módulo de potencia IGBT > IXGH32N170 IGBT Power Module Transistors IGBTs Single

IXGH32N170 IGBT Power Module Transistors IGBTs Single

Categoría:
Módulo de potencia IGBT
Precio:
Negotiable
Forma de pago:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Especificaciones
Número de parte:
IXGH32N170
Fabricante:
IXYS
Descripción:
IGBT 1700V 75A 350W TO247AD
Categoría:
Transistores - IGBTs - solos
Familia:
Transistores - IGBTs - solos
Introducción

IXGH32N170 Specifications

Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 75A
Current - Collector Pulsed (Icm) 200A
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 32A
Power - Max 350W
Switching Energy 11mJ (off)
Input Type Standard
Gate Charge 155nC
Td (on/off) @ 25°C 45ns/270ns
Test Condition 1020V, 32A, 2.7 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD (IXGH)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IXGH32N170 Packaging

Detection

IXGH32N170 IGBT Power Module Transistors IGBTs SingleIXGH32N170 IGBT Power Module Transistors IGBTs SingleIXGH32N170 IGBT Power Module Transistors IGBTs SingleIXGH32N170 IGBT Power Module Transistors IGBTs Single

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Las existencias:
Cuota de producción:
Negotiable