APT65GP60B2G IGBT Power Module Transistors IGBTs Single
Categoría:
Módulo de potencia IGBT
Precio:
Negotiable
Forma de pago:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Especificaciones
Número de parte:
APT65GP60B2G
Fabricante:
Microsemi Corporation
Descripción:
IGBT 600V 100A 833W TMAX
Categoría:
Transistores - IGBTs - solos
Familia:
Transistores - IGBTs - solos
Serie:
MOS 7® DEL PODER
Introducción
APT65GP60B2G Specifications
| Part Status | Not For New Designs |
|---|---|
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 100A |
| Current - Collector Pulsed (Icm) | 250A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 65A |
| Power - Max | 833W |
| Switching Energy | 605µJ (on), 896µJ (off) |
| Input Type | Standard |
| Gate Charge | 210nC |
| Td (on/off) @ 25°C | 30ns/91ns |
| Test Condition | 400V, 65A, 5 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
| Supplier Device Package | - |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
APT65GP60B2G Packaging
Detection
Envíe el RFQ
Las existencias:
Cuota de producción:
Negotiable