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IGBT Power Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip

Categoría:
Módulo de potencia IGBT
Precio:
Negotiable
Forma de pago:
T/T, D/P, D/A, L/C, Western Union, MoneyGram
Especificaciones
Modelo del producto:
NGTB40N120SWG
Paquete del proveedor:
TO-247-3
Breve descripción:
Transistor Bipolar de Puerta Aislada
Categoría de producto:
Módulo de potencia IGBT
Áreas de aplicación:
Soldadura
Fecha de la fabricación:
Dentro de un año
Alta luz:

NGTB40N120SWG

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IGBT Power Transistors

Introducción
Product Range
  •  Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip

App Characteristics

  •  TJmax = 175°C • Soft Fast Reverse Recovery Diode
  •  Optimized for High Speed Switching
  •  10 us Short Circuit Capability
  • These are Pb−Free Devices
Basic Data
Product Attribute Attribute Value
onsemi
Product Category: IGBT Transistors
RoHS: Details
Si
TO-247-3
Through Hole
Single
1.2 kV
2 V
20 V
80 A
535 W
- 55 C
+ 175 C
Tube
Brand: onsemi
Continuous Collector Current Ic Max: 40 A
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
30
Subcategory: IGBTs
Unit Weight: 1.340411 oz
DOWNLOAD DATASHEET
Application
  •  Widely used in stage, concert, network communication,Smartphones Tablets Laptops Notebooks Power Adapters Cameras Dongle
Order Process

 

Add Parts to RFQ form Submit RFQ We reply within 24 hours
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Chip Diagram

IGBT Power Transistors NGTB40N120SWG Charging Pile Inverter Welding ChipIGBT Power Transistors NGTB40N120SWG Charging Pile Inverter Welding ChipIGBT Power Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip

Envíe el RFQ
Las existencias:
Cuota de producción:
Negotiable